ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 100V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：91mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：52nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2100pF @ 50V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SH8JE5TB1 is a dual P-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage rating of -100V and a continuous drain current of ±4.5A. The device exhibits a maximum static on-state resistance (RDS(on)) of 91mΩ at VGS = -10V and ID = -4.5A. Total gate charge is typically 52.0nC at VGS = -10V. Power dissipation is rated at 2.0W with a thermal resistance junction-to-ambient of 62.5°C/W on a ceramic board. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration within a compact SOP-8 surface mount package
- Low on-state resistance for efficient switching performance
- Lead-free plating compliant with RoHS standards
- Halogen-free construction
Applications
- General electronic equipment switching applications
- Power management circuits
- Motor drive interfaces
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the SOP-8 footprint matches the provided dimensional drawings. Ensure proper handling procedures are implemented due to electrostatic sensitivity. Validate thermal management requirements based on the specified power dissipation limits under actual operating conditions.
Selection Notes
Select this component when a dual P-channel topology is required for 100V applications. Evaluate the 91mΩ RDS(on) limit against circuit efficiency targets. Consider the 2.0W power dissipation capability relative to the available PCB copper area for heat sinking. Verify compatibility with standard gate drive voltages of -10V or -4.5V.
Part Context
This part belongs to the SH8JE5 series of dual P-channel MOSFETs from ROHM. It shares the SOP-8 form factor with other devices in the lineup but differs in voltage and current ratings. The TB1 suffix indicates tape-and-reel packaging suitable for automated assembly processes.
Replacement Considerations
Consult the official ROHM product catalog for direct equivalents. Verify pinout compatibility and electrical parameter margins before substituting with similar dual P-channel MOSFETs from other manufacturers.
