SH8K15TB1

Overview

The SH8K15TB1 is a dual N-channel logic-level MOSFET manufactured by Rohm Semiconductor. It features a 30V drain-source voltage rating and a continuous drain current of 9A. The device utilizes an 8-SOP surface-mount package. Key electrical parameters include a maximum on-resistance of 21mΩ at 9A with a 10V gate drive, input capacitance of 630pF at 10V, and gate charge of 8.5nC at 5V. The component supports a power dissipation of 2W and operates at junction temperatures up to 150°C.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• Logic-level gate operation enabling direct microcontroller interfacing
• Low on-resistance characteristics for improved power efficiency

Applications

• Synchronous buck DC-DC converter circuits
• High-efficiency power management modules
• General-purpose switching applications in compact electronics

Procurement Notes

Verify the manufacturer designation carefully, as some distributor listings incorrectly attribute this part to LAPIS Semiconductor despite official documentation identifying Rohm Semiconductor as the producer. Confirm the specific suffix 'TB1' matches the required 8-SOP package and electrical specifications. Ensure RoHS compliance status aligns with project requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel MOSFET array is required within a compact 8-SOP footprint. The logic-level gate threshold makes it suitable for low-voltage control signals. Evaluate the 21mΩ on-resistance against thermal constraints, as the 2W power dissipation limit may require careful PCB layout for adequate heat spreading in high-current scenarios.

Part Context

This component belongs to the SH8K series of N-channel MOSFETs from Rohm Semiconductor. These devices are designed for high-efficiency switching applications where small form factors are critical. The dual configuration allows for bridge or half-bridge topologies without occupying additional board space compared to discrete single transistors.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings if considering alternative dual N-channel MOSFETs from other manufacturers.