ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 45V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：45V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Rds On (Max) @ Id, Vgs：46mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：9.6nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：550pF @ 10V
- Power - Max：1.4W (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
Download product information
Overview
The SH8K22TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of 45V and a continuous drain current (I_D) of 4.5A at 25°C. The typical on-resistance (R_DS(on)) is 0.046Ω at V_GS = 4V and 0.033Ω at V_GS = 10V. Key electrical parameters include a total gate charge (Q_g) of 6.8nC, a power dissipation (P_D) of 2W, and a drive voltage of 4V. The device operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP-8 surface-mount package for space-efficient designs.
- Low on-resistance characteristics optimized for efficient switching applications with minimal conduction losses.
- Compliant with AEC-Q101 automotive standards, ensuring reliability for demanding operational environments.
Applications
- Automotive electronic systems requiring AEC-Q101 qualified components
- General-purpose switching circuits in consumer electronics
- Power management modules utilizing low-voltage logic-level drive
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Check for any obsolescence notices or recommended new design alternatives if sourcing for long-term production runs.
Selection Notes
Select this component when a dual N-channel MOSFET with 45V rating and 4.5A current capacity is required in an SOP-8 footprint. Ensure the driving circuit can provide the necessary 4V gate drive voltage to achieve the specified low on-resistance. Consider the 2W power dissipation limit and thermal management needs for the intended application environment.
Part Context
This part belongs to Rohm's series of dual N-channel MOSFETs designed for compact power switching solutions. It shares the SOP-8 package form factor with other models in the family but is distinguished by its 45V voltage rating and specific on-resistance values tailored for 4V logic-level drive applications.
Replacement Considerations
SP8K22HZG is a verified alternative with identical pinout and package, also meeting AEC-Q101 standards. Verify that the substitute's R_DS(on) and I_D ratings match the original design requirements before implementation.
