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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 6A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Rds On (Max) @ Id, Vgs：38mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：2.9nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 10V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8K26GZ0TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for switching applications. It features a 40V drain-source voltage rating and a continuous drain current of 6.0A. The device offers a typical on-resistance of 0.035Ω at 4.5V gate drive and 0.027Ω at 10V. With a total gate charge of 2.9nC and power dissipation of 2.0W, it operates within a storage temperature range of -55°C to 150°C. This component is supplied in an 8-terminal SOP8 surface-mount package with dimensions of 6.0x5.0mm.
Feature Summary
- Dual N-channel configuration integrated into a compact SOP8 surface-mount package
- Optimized for low on-resistance to support efficient switching performance
- Compatible with standard logic-level gate drive voltages
Applications
- General purpose switching circuits
- DC/DC converter modules
- Power management systems
Procurement Notes
This component is designated as Not Recommended for New Designs (NRND) by the manufacturer. It remains available solely to support existing customers who have already incorporated this part into their production lines. Engineers initiating new projects should avoid selecting this part number and instead evaluate alternative components that are actively recommended for future design implementations.
Selection Notes
Designers requiring a similar dual N-channel MOSFET in an SOP8 package should consider the SH8KB6 as a direct replacement option. The SH8KB6 shares the same physical package dimensions and pinout but offers enhanced electrical specifications, including higher current handling and lower on-resistance. Transitioning to the recommended alternative ensures long-term supply stability for new product developments.
Part Context
The SH8K26 belongs to Rohm's series of dual N-channel power MOSFETs utilizing micro-processing technology for low on-resistance. These devices are intended for general-purpose switching applications where space efficiency is critical. The specific SH8K26 variant has reached end-of-life status for new designs, reflecting the manufacturer's strategy to phase out older generations in favor of updated performance tiers.
Replacement Considerations
The SH8KB6 is the confirmed substitute part number. It maintains identical SOP8 packaging and pin configuration while providing improved electrical characteristics such as increased drain current and reduced on-resistance.
