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The SH8K2TB1 is a dual N-channel MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 6 A. The device exhibits a typical on-resistance (Rds(on)) of 33 mOhms. Power dissipation is rated at 2 W, with a maximum operating temperature of +150°C. The component includes forward transconductance of 4 S and complies with RoHS standards.
Verify the specific ordering suffix to ensure correct packaging format, such as reel quantities. Confirm RoHS compliance status matches project requirements. Check supply status as availability may vary by region. Ensure the SOP-8 package dimensions align with PCB layout constraints before finalizing procurement orders.
Select this component when a 30 V rating and 6 A current capacity are required in a compact SOP-8 footprint. Compare Rds(on) values against alternative dual MOSFETs to optimize conduction losses. Verify that the 2 W power dissipation rating suits the thermal design of the target application environment.
This part belongs to ROHM's general-purpose MOSFET lineup designed for surface-mount assembly. The SOP-8 package provides a balance between current handling capability and board space efficiency. It serves as a standard discrete solution for low-voltage switching tasks in consumer and industrial electronics.
The SH8KA2 is listed as a similar level replacement with the same SOP-8 package. Note that the SH8KA2 offers an 8 A drain current compared to the SH8K2TB1's 6 A. Verify pin compatibility and electrical parameter differences before substituting.