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The SH8KA4TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for switching and motor drive applications. It features an SOP-8 surface-mount package with dimensions of 6.0x5.0 mm and a thickness of 1.75 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 9 A. Typical on-resistance (R_DS(on)) values are 0.0222 Ω at V_GS = 4.5 V and 0.0165 Ω at V_GS = 10 V. Total gate charge (Q_g) is typically 7.9 nC, with a power dissipation rating of 3 W. The component operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.
Verify the specific ordering suffix TB1 to ensure correct packaging and taping specifications matching the SOP-8 form factor. Confirm that the application environment remains outside automotive usage, as this standard-grade product is explicitly not recommended for车载 equipment. Check for lead-free and halogen-free compliance requirements against current project standards before finalizing procurement.
Select the SH8KA4TB1 when a dual N-channel MOSFET with 30 V capability and 9 A current rating is required in an SOP-8 package. Consider its 4.5 V drive voltage specification for logic-level compatibility. Evaluate thermal management needs given the 3 W power dissipation limit in the specified surface-mount footprint compared to higher-power alternatives like the HT8KA5.
The SH8KA4TB1 belongs to Rohm's SH8KA series of dual N-channel power MOSFETs. This series provides integrated dual-channel solutions in compact packages suitable for space-constrained designs. The TB1 suffix denotes the specific tape-and-reel packaging format for automated assembly. It serves as a standard-grade component distinct from automotive-specific variants.
The SH8KA2TB1 is documented as a similar level replacement with the same SOP-8 package. Note that the SH8KA2 offers different electrical characteristics, including an R_DS(on) of 0.034 Ω at 4.5 V and a higher power dissipation of 2.8 W. Verify pinout compatibility and parameter differences before substitution.