SH8KA4TB1

SH8KA4TB1

$1.47
  • Description:MOSFET 2N-CH 30V 9A 8SOP
  • Series:-

SKU:ee54244a63bb Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 9A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta)
  • Rds On (Max) @ Id, Vgs:21.4mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:15.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:640pF @ 15V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:Automotive
  • Qualification:AEC-Q101

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SH8KA4TB1

Overview

The SH8KA4TB1 is a dual N-channel power MOSFET manufactured by Rohm Semiconductor, designed for switching and motor drive applications. It features an SOP-8 surface-mount package with dimensions of 6.0x5.0 mm and a thickness of 1.75 mm. The device supports a drain-source voltage (V_DSS) of 30 V and a continuous drain current (I_D) of 9 A. Typical on-resistance (R_DS(on)) values are 0.0222 Ω at V_GS = 4.5 V and 0.0165 Ω at V_GS = 10 V. Total gate charge (Q_g) is typically 7.9 nC, with a power dissipation rating of 3 W. The component operates within a storage temperature range of -55°C to 150°C and complies with RoHS standards.

Feature Summary

  • Dual N-channel configuration optimized for motor drive and switching circuits
  • Low on-resistance characteristics for efficient power handling
  • Compact SOP-8 surface mount package design
  • Lead-free plating compliant with RoHS directives

Applications

  • Motor drive systems
  • General switching applications

Procurement Notes

Verify the specific ordering suffix TB1 to ensure correct packaging and taping specifications matching the SOP-8 form factor. Confirm that the application environment remains outside automotive usage, as this standard-grade product is explicitly not recommended for车载 equipment. Check for lead-free and halogen-free compliance requirements against current project standards before finalizing procurement.

Selection Notes

Select the SH8KA4TB1 when a dual N-channel MOSFET with 30 V capability and 9 A current rating is required in an SOP-8 package. Consider its 4.5 V drive voltage specification for logic-level compatibility. Evaluate thermal management needs given the 3 W power dissipation limit in the specified surface-mount footprint compared to higher-power alternatives like the HT8KA5.

Part Context

The SH8KA4TB1 belongs to Rohm's SH8KA series of dual N-channel power MOSFETs. This series provides integrated dual-channel solutions in compact packages suitable for space-constrained designs. The TB1 suffix denotes the specific tape-and-reel packaging format for automated assembly. It serves as a standard-grade component distinct from automotive-specific variants.

Replacement Considerations

The SH8KA2TB1 is documented as a similar level replacement with the same SOP-8 package. Note that the SH8KA2 offers different electrical characteristics, including an R_DS(on) of 0.034 Ω at 4.5 V and a higher power dissipation of 2.8 W. Verify pinout compatibility and parameter differences before substitution.

SH8KA4TB1SH8KA4TB1
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