SH8KC5TB1

SH8KC5TB1

$1.23
  • Description:60V 3.5A, DUAL NCH+NCH, SOP8, PO
  • Series:-

SKU:e0a65f865000 Category: Brand:

  
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Product Detailed Parameters

  • Description:60V 3.5A, DUAL NCH+NCH, SOP8, PO
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
  • Rds On (Max) @ Id, Vgs:95mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:135pF @ 30V
  • Power - Max:2W (Ta)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SH8KC5TB1

Overview

The SH8KC5TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (Vdss) rating of 60V and a continuous drain current (Id) of 3.5A. The device exhibits low on-resistance, specified at 0.106 ohms typ at Vgs=4.5V and 0.073 ohms typ at Vgs=10V. Key electrical parameters include a total gate charge (Qg) of 1.7 nC, power dissipation (Pd) of 2W, and a reverse transfer capacitance characteristic (trr) of 23 ns. It operates within a storage temperature range of -55°C to 150°C and is RoHS compliant.

Feature Summary

  • Dual N-channel configuration integrated into a compact SOP-8 surface mount package for space-efficient circuit design.
  • Low on-resistance characteristics optimized for efficient switching performance in power management applications.
  • Designed specifically for use in switching circuits and motor drive systems requiring reliable high-frequency operation.

Applications

  • Switching applications
  • Motor drive systems

Procurement Notes

Verify the specific ordering suffix 'TB1' against the manufacturer's official documentation to confirm tape-and-reel packaging details and quantity per reel. Ensure that the component status is reviewed, as standard-grade products may have restrictions regarding automotive or critical infrastructure deployment. Cross-reference the datasheet revision date with your bill of materials to guarantee compatibility with existing design specifications.

Selection Notes

Select this component when a dual N-channel MOSFET with a 60V rating and approximately 3.5A current capacity is required in an SOP-8 footprint. Consider the 0.106 ohm on-resistance at 4.5V gate drive if interfacing with lower-voltage logic controllers. Evaluate the 2W power dissipation limit against thermal management constraints in the final enclosure design to ensure safe operating temperatures under load.

Part Context

This part belongs to ROHM Semiconductor's discrete power MOSFET portfolio, which focuses on silicon-based solutions for general-purpose switching and power control. The SOP-8 package variant provides a balance between thermal performance and board space efficiency compared to larger through-hole options. It serves as a standard-grade component suitable for industrial and consumer electronics where automotive qualification is not mandated.

Replacement Considerations

Consult the manufacturer's replacement guide for direct equivalents. The SH8K5 is listed as a similar level part with the same SOP-8 package but offers different electrical ratings, including a 30V Vdss and 4.5A Id. Verify pinout compatibility and parameter overlaps before substituting to avoid circuit malfunction.

SH8KC5TB1SH8KC5TB1
$1.23
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