SH8KC7TB1

Overview

The SH8KC7TB1 is a dual N-channel power MOSFET from ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of 60V and a continuous drain current (I_D) of 10.5A. The device exhibits low on-resistance, with typical values of 0.0123 Ω at V_GS = 4.5V and 0.0095 Ω at V_GS = 10V. Total gate charge (Q_g) is typically 10.8 nC, supporting efficient switching operations. Power dissipation is rated at 2W, with a drive voltage of 4.5V. Operating temperatures range from -55°C to 150°C storage.

Feature Summary

• Dual N-channel configuration integrated into a compact SOP-8 surface mount package for space-constrained designs.
• Low on-resistance characteristics optimized for high-efficiency switching applications.
• Lead-free plating compliant with RoHS directives and halogen-free construction.

Applications

• General purpose switching circuits
• DC/DC converter modules

Procurement Notes

Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging quantities. Ensure compatibility with standard SOP-8 footprint dimensions during PCB layout. Confirm RoHS compliance status through official manufacturer documentation prior to final procurement decisions.

Selection Notes

Select this component when a dual N-channel topology is required within a small form factor. The 60V rating suits low-voltage systems. Evaluate thermal management requirements given the 2W power dissipation limit in the SOP-8 package. Compare gate charge specifications against driver capabilities for optimal switching speed.

Part Context

This part belongs to ROHM's series of dual N-channel MOSFETs designed for general-purpose switching. It shares the SOP-8 package code with other variants like SH8KC5 and SH8K32 but differs significantly in current handling and resistance parameters. The TB1 suffix indicates the specific taping packaging format.

Replacement Considerations

Direct substitutes include SH8KC5 or SH8K32 if pinout and package compatibility are prioritized over electrical performance. Verify that alternative parts meet the 60V breakdown and 10.5A current requirements. Check for equivalent R_DS(on) values to ensure similar thermal performance.