SH8KE6TB1

Overview

The SH8KE6TB1 is a dual N-channel Power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (V_DSS) of 100 V and a continuous drain current (I_D) of 4.5 A. The device exhibits a typical on-resistance (R_DS(on)) of 0.056 Ω at V_GS = 4.5 V and 0.045 Ω at V_GS = 10 V. Total gate charge (Q_g) is typically 3.3 nC, with a power dissipation rating of 2 W. The component operates within a storage temperature range of -55°C to +150°C and complies with RoHS standards.

Feature Summary

• Integrates two 100 V N-channel MOSFETs into a compact SOP-8 surface-mount package for space-efficient designs.
• Provides low on-resistance characteristics suitable for high-efficiency switching applications.
• Features fast switching performance with low total gate charge to minimize drive losses.

Applications

• General purpose switching circuits
• Motor driver stages
• Power management modules

Procurement Notes

Verify the specific ordering suffix TB1 against the manufacturer's latest datasheet to confirm pinout compatibility and packaging details. Ensure that the application does not involve automotive equipment, as this product is classified as standard grade and is explicitly not recommended for such use cases.

Selection Notes

Select this component when a dual N-channel configuration is required with a 100 V breakdown voltage. The SOP-8 package offers a balance between thermal performance and board space. Consider the R_DS(on) values at both 4.5 V and 10 V gate drive levels to ensure compatibility with the intended control logic voltage.

Part Context

This part belongs to ROHM's SH series of dual N-channel MOSFETs designed for general-purpose switching. The SH8KE6TB1 variant specifically utilizes the SOP-8 footprint, distinguishing it from other packages like HSOP8 or TSMT8 found in related models. It serves as a discrete solution for integrating two channels in a single small outline package.

Replacement Considerations

For existing designs requiring a direct replacement, verify pin-to-pin compatibility with other SOP-8 dual N-channel MOSFETs from ROHM or other manufacturers. Ensure that the substitute part meets or exceeds the 100 V V_DSS and 4.5 A I_D requirements while maintaining similar thermal and electrical characteristics.