SH8KE7TB1

Overview

The SH8KE7TB1 is a dual N-channel power MOSFET manufactured by ROHM Semiconductor, housed in an SOP-8 surface-mount package. It features a drain-source voltage (VDSS) of 100V and a continuous drain current (ID) of ±8A. The device exhibits a maximum static on-resistance (RDS(on)) of 20.9mΩ at VGS=10V and 29.6mΩ at VGS=4.5V. Total gate charge (Qg) is typically 19.8nC at VGS=10V and 10.5nC at VGS=4.5V. Power dissipation is rated at 2.0W, with a junction temperature range of -55°C to +150°C.

Feature Summary

• Low on-resistance design for efficient switching performance
• Compact SOP-8 surface mount package for space-saving integration
• Lead-free plating compliant with RoHS directives
• Halogen-free material composition

Applications

• Switching circuits
• Motor drive systems

Procurement Notes

Verify the component against the official ROHM datasheet specifications before implementation. Confirm that the application environment remains within the specified thermal and electrical limits. Ensure proper ESD protection measures are integrated into the manufacturing process due to the electrostatic sensitivity of the device.

Selection Notes

Select this component for applications requiring a 100V rating with moderate current handling in a small footprint. Consider the thermal resistance values when designing heat dissipation strategies. Verify compatibility with logic levels if driving at lower gate voltages such as 4.5V.

Part Context

This part belongs to the SH8KE7 series of dual N-channel MOSFETs from ROHM. The TB1 suffix indicates the specific taping code used for embossed tape packaging. The series is designed to balance low on-resistance with high breakdown voltage for compact power management solutions.

Replacement Considerations

Direct substitutes must match the 100V VDSS, 8A ID, and SOP-8 package constraints. Verify pinout compatibility and ensure equivalent RDS(on) and thermal characteristics to maintain circuit performance without redesign.