SH8M41GZETB

SH8M41GZETB

$1.73
  • Description:MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
  • Series:-

SKU:edebcb2197f4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss):80V
  • Current - Continuous Drain (Id) @ 25°C:3.4A, 2.6A
  • Rds On (Max) @ Id, Vgs:130mOhm @ 3.4A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:9.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:600pF @ 10V
  • Power - Max:2W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOP
  • Grade:-
  • Qualification:-

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SH8M41GZETB

Overview

The SH8M41GZETB is a complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an SOP-8 surface-mount package. The N-channel device supports a drain-source voltage of 80V with a continuous current of 3.4A, while the P-channel counterpart handles -80V at 2.6A. Maximum on-state resistance is specified at 130mΩ for the N-channel and 240mΩ for the P-channel. Total power dissipation reaches 2.0W, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

  • Complementary N-channel and P-channel configuration in a single compact SOP-8 package
  • Low on-state resistance optimized for efficient switching applications
  • Halogen-free construction compliant with RoHS standards

Applications

  • DC-DC converter circuits
  • Motor driver interfaces
  • Power management modules

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific ordering suffix matches the required packaging specifications. Ensure compliance with RoHS directives and halogen-free requirements before integration into final assemblies.

Selection Notes

Evaluate thermal resistance characteristics against the target PCB layout, as heat dissipation varies significantly between ceramic and FR4 mounting surfaces. Verify gate drive voltage levels to ensure operation remains within the specified threshold ranges for optimal conduction performance.

Part Context

This component belongs to the SH8M41 series of complementary MOSFETs designed for general-purpose switching tasks. It provides a space-efficient solution for designs requiring both high-side and low-side control capabilities within a standard eight-pin outline.

Replacement Considerations

Consult the official datasheet for cross-reference information regarding similar level parts or alternative packages. Verify pinout compatibility and electrical parameter alignment before substituting existing components in established designs.

SH8M41GZETBSH8M41GZETB
$1.73
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