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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 9A/7A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：9A, 7A
- Rds On (Max) @ Id, Vgs：18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：1190pF @ 10V
- Power - Max：2W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8M4TB1 is a complementary power MOSFET from ROHM Semiconductor, integrating N-channel and P-channel devices in a single SOP-8 package. It features an 80V drain-source voltage rating and supports continuous drain currents of 3.4A. The component exhibits low on-resistance, with typical values of 0.12Ω at 4V gate drive, 0.11Ω at 4.5V, and 0.09Ω at 10V. Total gate charge is typically 6.6nC, and power dissipation reaches 2W. Designed for surface mount applications, it operates within a temperature range of -55°C to 150°C.
Feature Summary
- Low on-resistance optimized for switching efficiency
- Compact SOP-8 surface mount package
- Lead-free plating compliant with RoHS directives
- Halogen-free construction
Applications
- General purpose switching circuits
- Power management modules
- Consumer electronics power stages
Procurement Notes
Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging and 2500-unit quantity. Confirm RoHS compliance status through official documentation before integration. Ensure the supply status aligns with project requirements, as availability may vary by region or distributor.
Selection Notes
Select this component for designs requiring dual polarity control in a minimal footprint. The 80V rating suits low-voltage DC-DC converters. Verify thermal management capabilities given the 2W dissipation limit in the SOP-8 package. Ensure gate drive voltages match the specified 4V, 4.5V, or 10V thresholds for optimal Rds(on) performance.
Part Context
This part belongs to ROHM's complementary MOSFET series, designed to simplify driver circuitry by combining N and P channels. The SH8M4TB1 variant specifically targets 80V applications, distinguishing it from lower voltage counterparts like the SH8M8 (30V). It serves as a standard-grade discrete solution for compact power systems.
Replacement Considerations
The SH8MA3TB1 is listed as a similar level replacement with the same SOP-8 package. Verify electrical parameter compatibility, particularly current ratings and on-resistance, before substitution.
