SH8M5TB1

Overview

The SH8M5TB1 is a dual complementary power MOSFET manufactured by ROHM Semiconductor, integrating one N-channel and one P-channel transistor within an 8-SOP surface-mount package. The device features a drain-source voltage rating of 100V with continuous drain currents of 3A for the N-channel and 2.5A for the P-channel. It exhibits low on-resistance values of 170 mΩ and 290 mΩ at Vgs=4.5V, alongside total gate charges of 15 nC and 26.2 nC respectively. Designed for enhancement mode operation, it supports a maximum power dissipation of 2W and operates reliably across a temperature range from -55°C to +150°C.

Feature Summary

• Dual complementary configuration combining N-channel and P-channel transistors in a single compact SOP-8 package
• Low on-resistance characteristics optimized for efficient switching performance
• High breakdown voltage capability suitable for robust circuit protection applications

Applications

• DC-DC converter circuits requiring synchronous rectification
• Motor driver interfaces for small-scale actuation systems
• General-purpose switching applications in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm exact packaging quantities and tape-and-reel specifications. Ensure compliance with RoHS directives as indicated in current datasheets. Confirm availability status as this component may be subject to lifecycle changes or obsolescence notices from the manufacturer.

Selection Notes

Select this component when a matched N/P pair is required for high-voltage switching applications within space-constrained designs. Evaluate thermal management requirements carefully due to the 2W power dissipation limit in the SOP-8 package. Compare gate charge parameters against driver capabilities to ensure adequate switching speeds without excessive drive losses.

Part Context

This part belongs to ROHM's SH series of dual MOSFET arrays, designed to replace discrete component solutions in compact power management circuits. The SH8M5TB1 specifically targets applications needing 100V isolation with moderate current handling capabilities in standard surface-mount form factors.

Replacement Considerations

The SH8M51GZETB is documented as a direct replacement alternative for discontinued variants within the same family. Verify pin compatibility and electrical parameter alignment before substitution.