SH8MA4TB1

$1.01

Description：MOSFET N/P-CH 30V 9A 8SOP
Series：-

SKU:5ff2aae81d96 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 9A 8SOP
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 8.5A (Ta)
Rds On (Max) @ Id, Vgs：21.4mOhm @ 9A, 10V, 29.6mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：15.5nC @ 10V, 19.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：640pF @ 15V, 890pF @ 15V
Power - Max：2W (Ta)
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOP
Grade：-
Qualification：-

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SH8MA4TB1

Overview

The SH8MA4TB1 is a 30V complementary power MOSFET featuring an N-channel and P-channel pair in a single SOP8 surface-mount package. It offers a drain-source voltage of 30V with continuous drain currents of 9A for the N-channel and 7A for the P-channel. Typical on-resistance values are 0.0222Ω at VGS=4.5V and 0.0165Ω at VGS=10V. The device has a total gate charge of 7.9nC, supports a drive voltage of 4.5V, and provides 3W power dissipation. Operating temperatures range from -55°C to 150°C.

Feature Summary

Complementary N+P configuration in a compact SOP8 package
Low on-resistance for efficient switching performance
Surface mount mounting style suitable for automated assembly

Applications

Switching applications
Motor driver circuits

Procurement Notes

Verify the specific ordering suffix TB1 to ensure correct packaging format. Confirm RoHS compliance status as required by project specifications. Check supply status documentation for availability constraints related to standard-grade products.

Selection Notes

Select this component for designs requiring integrated complementary MOSFETs in a small footprint. Ensure the application operates within the 30V drain-source voltage limit and 3W power dissipation rating. Verify that the drive voltage requirements align with the specified 4.5V threshold for optimal on-resistance performance.

Part Context

This part belongs to Rohm's 30V complementary power MOSFET series. It is categorized as a standard-grade product intended for general-purpose switching and motor driving applications. The device is not recommended for use in automotive equipment according to manufacturer guidelines.