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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 4.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta), 5.5A (Ta)
- Rds On (Max) @ Id, Vgs：55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：3.5nC @ 10V, 17.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 20V, 920pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8MB4TB1 is a complementary power MOSFET manufactured by ROHM Semiconductor, featuring an N-channel and P-channel pair integrated within a single SOP-8 surface-mount package. This component is designed for low on-resistance performance to support efficient switching applications. The device operates with a drain-source voltage rating of 30V and supports continuous drain currents up to 6.0A for the N-channel and 7.0A for the P-channel variant. It exhibits typical on-resistances of 0.033Ω at 4V gate drive and includes a total gate charge of approximately 6.8nC. The unit is housed in a compact 6.0x5.0mm footprint with a thickness of 1.75mm, suitable for space-constrained designs.
Feature Summary
- Integrated complementary N-channel and P-channel configuration in a single package
- Low on-resistance characteristics optimized for switching efficiency
- Compact SOP-8 surface-mount form factor for board space savings
Applications
- Motor driver circuits
- DC-DC converter output stages
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix TB1 to confirm tape-and-reel packaging quantities of 2500 units per reel. Ensure compatibility with SOP-8 footprints during PCB layout. Confirm RoHS compliance status through official documentation before integration into regulated assemblies.
Selection Notes
Select this component when a matched N-P pair is required for half-bridge or synchronous rectification topologies. Evaluate thermal dissipation requirements against the 3.1W power dissipation limit. Compare gate charge specifications against driving capabilities to ensure adequate switching speed without excessive drive current demands.
Part Context
This part belongs to ROHM's SH series of complementary MOSFETs, which are engineered for high-density power management solutions. The SH8M family specifically targets applications requiring matched transistor pairs in small packages. It serves as a standard-level product intended for general industrial and consumer electronics rather than automotive-grade environments.
Replacement Considerations
The SH8MA3TB1 is listed as a similar level replacement with the same SOP-8 package. Verify current ratings and on-resistance values if substituting, as the SH8MA3 offers slightly higher current capacity (7.0A) compared to the SH8MB4TB1.
