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Product Detailed Parameters
- Description：MOSFET N/P-CH 40V 8.5A 8SOP
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
- Rds On (Max) @ Id, Vgs：19.4mOhm @ 8.5A, 10V, 16.8mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：10.6nC @ 20V, 51nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds：530pF @ 20V, 2870pF @ 20V
- Power - Max：2W (Ta)
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The SH8MB5TB1 is a complementary MOSFET featuring N-channel and P-channel configurations within a single SOP-8 surface-mount package. It provides a drain-source voltage (V_DSS) of 40V and a continuous drain current (I_D) of 8.5A. The device exhibits low on-resistance, with typical R_DS(on) values of 0.0182Ω at V_GS = 4.5V and 0.0149Ω at V_GS = 10V. Total gate charge (Q_g) is typically 5nC, supporting efficient switching operations. Power dissipation (P_D) is rated at 2W, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Complementary N+P channel configuration in a compact SOP-8 package
- Low on-resistance for improved efficiency in switching applications
- Lead-free plating and RoHS compliance
Applications
- General purpose switching circuits
- Motor driver interfaces
- Power management modules
Procurement Notes
Verify the specific ordering suffix TB1 against the manufacturer's latest datasheet to confirm packaging details and revision status. Ensure compatibility with SOP-8 footprint requirements during PCB layout. Confirm that the application does not involve automotive use, as this component is designated for standard-grade products and is not recommended for vehicle equipment.
Selection Notes
Select this component when a dual complementary MOSFET solution is required in a small form factor. The 40V rating suits low-voltage DC-DC converters and load switches. Consider the 2W power dissipation limit and thermal resistance of the SOP-8 package for heat management. Verify drive voltage compatibility, as R_DS(on) specifications vary between 4.5V and 10V gate drive levels.
Part Context
The SH8MB5TB1 belongs to ROHM Semiconductor's lineup of complementary MOSFETs designed for space-constrained designs. It integrates both N-channel and P-channel devices into one package, reducing board area compared to discrete solutions. The SOP-8 package facilitates automated surface-mount assembly, making it suitable for high-volume consumer electronics and industrial control systems requiring reliable switching performance.
Replacement Considerations
Direct substitutes must match the 40V V_DSS, 8.5A I_D, and SOP-8 package. Verify pinout compatibility for complementary N+P configurations. Check if alternative parts offer similar R_DS(on) at the intended drive voltage. Ensure the replacement also meets RoHS standards and operates within the -55°C to +150°C temperature range.
