SI1016X-T1-E3

Overview

The Vishay Siliconix SI1016X-T1-E3 is a complementary N- and P-channel MOSFET in a SC-89 (SOT-563F) package. It features TrenchFET technology with a 20 V drain-source voltage rating. The N-channel exhibits an on-resistance of 0.7 Ω at 4.5 V gate drive, while the P-channel shows 1.2 Ω under similar conditions. Both channels support 1.8 V operation and provide 2000 V ESD protection. The device operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

• Complementary N- and P-channel configuration for high-side switching applications
• TrenchFET power MOSFET technology ensuring low on-resistance
• Capable of operating with a 1.8 V gate drive signal
• Provides 2000 V electrostatic discharge protection

Applications

• Replacing digital transistors and level-shifters
• Battery operated systems requiring low battery voltage operation
• Power supply converter circuits

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status according to IEC 61249-2-21 standards. Ensure proper handling procedures are followed due to the small footprint and surface mount nature of the SC-89 package.

Selection Notes

Select this component when a compact complementary pair is required for low-voltage logic interfacing. The SC-89 package minimizes board space compared to standard SOT-23 configurations. Verify that the 20 V voltage rating aligns with the specific circuit requirements before implementation.

Part Context

This part belongs to the Vishay Siliconix SI1 series of TrenchFET MOSFETs. It serves as a lead-free and halogen-free alternative to older versions, indicated by the 'E3' suffix. The device integrates both N-channel and P-channel structures into a single six-lead surface-mount package.

Replacement Considerations

SI1016X-E3

FAQ

What is the typical gate threshold voltage for the SI1016X?

The typical gate threshold voltage is ± 0.8 V.

Does the SI1016X support 1.8 V logic operation?

Yes, the datasheet explicitly lists 1.8 V operation as a feature.

What is the maximum continuous drain current for the N-channel?

The maximum continuous drain current is 515 mA at a junction temperature of 150 °C.