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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.485A SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：485mA, 370mA
- Rds On (Max) @ Id, Vgs：700mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.75nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1016X-T1-GE3 is a complementary N- and P-channel MOSFET in a SOT-563 (SC-89) package. It features a drain-source voltage of 20 V for both channels. The N-channel offers an on-resistance of 0.7 Ω at VGS = 4.5 V with a continuous drain current of 600 mA, while the P-channel provides 1.2 Ω at VGS = -4.5 V with 400 mA. Typical gate threshold voltages are ±0.8 V, supporting 1.8 V operation. Total gate charges are 750 pC for the N-channel and 1500 pC for the P-channel. Maximum power dissipation is 280 mW at 25 °C, with an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Complementary N- and P-channel configuration within a single compact surface-mount package
- TrenchFET technology providing low on-resistance and fast switching speeds
- Capable of direct operation with 1.8 V logic levels
- Includes high electrostatic discharge protection rating
Applications
- Battery operated systems
- Power supply converter circuits
- High-side switching applications
Procurement Notes
Verify component authenticity by checking the manufacturer's marking code against official documentation. Confirm RoHS compliance status through the supplier's certificate of conformity. Ensure the ordering suffix matches the required lead-free and halogen-free specifications. Validate that the received package type corresponds to the SC-89 or SOT-563 footprint requirements for your design.
Selection Notes
Select this component when space constraints require a dual complementary switch in a minimal footprint. It is suitable for low-voltage digital signal switching where low offset voltage is critical. Consider the thermal limitations of the small package for high-duty cycle applications. Verify that the 20 V breakdown voltage meets the system's maximum transient requirements.
Part Context
This part belongs to the Si1016X series of TrenchFET power MOSFETs manufactured by Vishay Siliconix. The product utilizes silicon technology optimized for low-voltage switching applications. The specific model integrates both N-channel and P-channel devices into one assembly to simplify circuit board layout.
Replacement Considerations
Check datasheets for alternative complementary MOSFETs in SOT-563 packages. Ensure replacement parts match the 20 V drain-source voltage rating. Verify that on-resistance values and gate charge characteristics are compatible with the existing drive circuitry.
FAQ
What is the typical gate threshold voltage for the SI1016X?
The typical gate threshold voltage is ±0.8 V for both the N-channel and P-channel devices.
Does the SI1016X support 1.8 V operation?
Yes, the device is designed to operate with a gate-source voltage as low as 1.8 V.
What is the ESD protection rating of this component?
The component provides 2000 V electrostatic discharge protection according to the Human Body Model (HBM).
