SI1023CX-T1-GE3

Overview

The Vishay Siliconix SI1023CX-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -20 V drain-source voltage and a continuous drain current of -0.45 A at 25 °C. The on-state resistance is specified as 0.756 Ω at VGS = -4.5 V and ID = -0.35 A, or 1.038 Ω at VGS = -2.5 V. Total gate charge is typically 1 nC to 2.5 nC depending on conditions. The device operates within a junction temperature range of -55 °C to +150 °C and is housed in an SC-89 (SOT-563F) six-lead surface-mount package.

Feature Summary

• Dual P-channel configuration with independent channels for compact circuit integration
• TrenchFET power MOSFET structure providing fast switching speeds
• Halogen-free construction compliant with IEC 61249-2-21 standards
• Integrated ESD protection rated at 1000 V under human body model testing

Applications

• Load and small signal switching for portable electronic devices
• Driver circuits for relays, solenoids, displays, and lamps
• Battery-operated systems requiring efficient power management
• Smartphones and tablet PCs

Procurement Notes

Verify the component against the official Vishay datasheet document number 63303 to confirm authenticity. Ensure the marking code matches the specified format for lot traceability and date codes. Confirm that the ordering suffix indicates lead-free and halogen-free compliance. Validate the package type is SC-89 with six leads before finalizing procurement.

Selection Notes

Select this component when a dual P-channel switch is required in a minimal footprint. The low gate charge supports high-frequency operation suitable for portable applications. Verify that the system's gate drive voltage meets the threshold requirements for the desired on-resistance level. Consider the thermal resistance ratings if operating near maximum ambient temperatures.

Part Context

This part belongs to the Vishay Siliconix Si1023 series of dual P-channel MOSFETs. It shares the SC-89 package form factor with other variants in the family but differs in electrical specifications such as breakdown voltage and on-resistance. The TrenchFET technology distinguishes it from older planar MOSFET designs by offering improved switching performance.

Replacement Considerations

Direct substitutes must match the dual P-channel topology, -20 V rating, and SC-89 package. Verify pinout compatibility between G1/S1/D1 and G2/S2/D2 configurations. Check that replacement parts meet the same thermal and electrical limits defined in the absolute maximum ratings.