SI1023X-T1-GE3

Overview

The Vishay Siliconix SI1023X-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SC-89 (SOT-563) surface-mount package. It features a drain-source voltage of -20 V and a continuous drain current of -370 mA at 25 °C. The device exhibits a low on-resistance of 1.2 Ω at VGS = -4.5 V and operates with a typical gate threshold voltage of 0.45 V. Designed for high-speed switching, it achieves a turn-on time of 14 ns and includes gate-source ESD protection rated at 2000 V.

Feature Summary

• TrenchFET Power MOSFET architecture optimized for 1.8 V operation
• Very small footprint suitable for space-constrained designs
• High-side switching capability with low offset error voltage
• Gate-source ESD protection rated at 2000 V

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, and memories
• Battery operated systems requiring low battery voltage operation
• Power supply converter circuits
• Load and power switching in cell phones and pagers

Procurement Notes

Verify the component against datasheet document number 71169 to confirm authenticity. Ensure the marking code matches 'B' for the Si1023X. Confirm RoHS compliance and halogen-free status according to IEC 61249-2-21 definition during inspection.

Selection Notes

Select this component for applications requiring dual P-channel switching in a minimal footprint. It is suitable for low-voltage logic interfaces due to its 1.8 V rated operation and low threshold voltage. Consider the thermal dissipation limits when designing for high ambient temperatures or continuous duty cycles.

Part Context

This part belongs to the Si1023X series from Vishay Siliconix. It is specifically designed as a dual P-channel MOSFET offering high-side switching capabilities. The product summary indicates specific RDS(on) values at various gate voltages, highlighting its efficiency in low-voltage drive scenarios compared to standard logic-level devices.

Replacement Considerations

Check for direct replacements within the Vishay Siliconix portfolio that maintain the SC-89 package and dual P-channel configuration. Verify that any substitute meets the -20 V drain-source voltage requirement and provides comparable on-resistance at the target gate drive voltage.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage is ±6 V.

How does the on-resistance vary with gate voltage?

RDS(on) is 1.2 Ω at VGS = -4.5 V, 1.6 Ω at VGS = -2.5 V, and 2.7 Ω at VGS = -1.8 V.

Is the device protected against electrostatic discharge?

Yes, the gate-source ESD rating is 2000 V using the Human Body Model (Method 3015).