SI1024X-T1-GE3

Overview

The Vishay Siliconix SI1024X-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SC-89 (SOT-563) surface-mount package. It features a drain-source voltage of 20 V and a continuous drain current of 600 mA at 4.5 V gate drive. The device exhibits a maximum on-resistance of 0.7 Ω under standard conditions and operates within a junction temperature range of -55 °C to 150 °C. Key electrical parameters include a typical gate threshold voltage of 0.9 V, a total gate charge of 750 pC, and fast switching speeds with turn-on and turn-off times around 10 ns and 36 ns respectively.

Feature Summary

• Dual N-channel configuration for compact high-side switching applications
• TrenchFET power MOSFET technology enabling low on-resistance and fast switching
• 1.8 V rated operation suitable for low battery voltage systems
• Gate-source ESD protection rated at 2000 V

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, memories
• Battery operated systems
• Power supply converter circuits
• Load and power switching for cell phones and pagers

Procurement Notes

Verify the component against the official Vishay datasheet document number 71170 to confirm specifications. Ensure the ordering suffix matches the lead-free and halogen-free requirement specified by GE3. Cross-reference the marking code C with the manufacturer's documentation to validate authenticity before integration into production.

Selection Notes

Select this component for designs requiring dual N-channel switching in a minimal footprint. Evaluate the thermal performance based on the 280 mW power dissipation rating at 25 °C ambient temperature. Confirm that the 20 V drain-source voltage provides adequate headroom for the specific circuit application while maintaining compatibility with low-voltage logic levels.

Part Context

This part belongs to the Si1024X series from Vishay Siliconix, designed specifically for portable electronics and battery-powered devices. The SC-89 package allows for space-constrained PCB layouts. The product complies with RoHS directives and IEC 61249-2-21 definitions for halogen-free materials, supporting environmentally conscious manufacturing processes.

Replacement Considerations

Direct substitutes must match the dual N-channel topology, 20 V rating, and SC-89 package. Verify equivalent on-resistance and gate charge characteristics to ensure compatible switching speeds. Consult Vishay documentation for any updated revisions or qualified alternative packages within the same series.