SI1026X-T1-GE3

Overview

The Vishay Siliconix SI1026X-T1-GE3 is a dual N-channel MOSFET array housed in an SC-89 (SOT-563F) surface-mount package. It features a drain-source voltage rating of 60 V and a continuous drain current of 305 mA at 25 °C. The device exhibits a maximum on-resistance of 1.40 Ω at VGS = 10 V and 3.0 Ω at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage range of 1 to 2.5 V, total gate charge of 600 pC, and input capacitance of 30 pF. Thermal characteristics specify a maximum power dissipation of 250 mW at 25 °C and an operating junction temperature range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration within a miniature SC-89 package for board area reduction
• Low on-resistance and low threshold voltage enabling efficient low-voltage operation
• Fast switching speed with low input and output leakage currents
• ESD protection rated at 2000 V via Human Body Model

Applications

• Drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors
• Battery operated systems
• Solid-state relays

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and halogen-free status against IEC 61249-2-21 standards. Validate the specific ordering suffix T1-GE3 matches required packaging and lead-free specifications. Ensure storage conditions adhere to moisture sensitivity levels defined in the datasheet to prevent package damage prior to assembly.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage signal switching or driver applications. Evaluate the 1.40 Ω on-resistance limit against system power loss constraints at the intended operating current. Consider the 60 V breakdown voltage margin relative to circuit supply rails. Verify that the 305 mA continuous current rating accommodates peak load requirements without exceeding thermal limits.

Part Context

This part belongs to the Vishay Siliconix Si1026X series of dual N-channel MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching characteristics. The device is designed for surface-mount assembly, offering a small footprint suitable for portable electronics and space-constrained designs requiring multiple switching elements.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.