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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V SC89
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：650mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 15V
- Power - Max：220mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SC-89 (SOT-563F)
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1028X-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features an SC-89 (SOT-563F) surface-mount package with six leads. The device provides a maximum continuous drain current of 0.48 A at 25 °C and supports a pulsed drain current of 1 A. Key electrical parameters include a typical gate charge of 12 nC, a maximum on-state resistance of 0.770 Ω at VGS = 4.5 V, and a threshold voltage range of 1.2 V to 2.5 V. Operating junction temperatures span from -55 °C to +150 °C.
Feature Summary
- TrenchFET Power MOSFET architecture for optimized performance
- ESD protection rated at 550 V typical HBM
- Low offset voltage characteristics suitable for signal switching
- Lead-free and halogen-free material compliance
Applications
- Load and signal switching for portable devices
- Drivers for relays, solenoids, lamps, hammers, displays, and memories
- Battery-operated systems requiring low-voltage operation
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Ensure that the SC-89 footprint dimensions align with PCB layout requirements before finalizing procurement. Cross-reference the manufacturer's datasheet revision history to confirm the most current technical specifications are being utilized for design validation.
Selection Notes
Select this component when designing circuits requiring dual N-channel configurations in a minimal board area. Evaluate the thermal resistance ratings against the expected ambient temperature and power dissipation limits. Confirm that the gate drive voltage meets the specified thresholds for optimal on-state resistance performance under the intended load conditions.
Part Context
This part belongs to the Si1028X series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed for applications demanding high-speed switching and low-voltage operation within compact form factors. The product utilizes advanced trench technology to achieve efficient power handling capabilities relative to its small physical size.
Replacement Considerations
Consult official replacement guides or contact Vishay technical support for verified substitute part numbers. Do not assume functional equivalence based solely on pinout compatibility without verifying electrical parameter alignment.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is 0.48 A at an ambient temperature of 25 °C.
Does the device include ESD protection?
Yes, the device offers ESD protection rated at 550 V typical Human Body Model (HBM).
What is the operating junction temperature range?
The operating junction and storage temperature range spans from -55 °C to +150 °C.
