SI1029X-T1-GE3

SI1029X-T1-GE3

$0.65
  • Description:MOSFET N/P-CH 60V 0.305A SC89
  • Series:TrenchFET®

SKU:29db16c7e537 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET N/P-CH 60V 0.305A SC89
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:305mA, 190mA
  • Rds On (Max) @ Id, Vgs:1.4Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:750nC @ 4.5V, 1700nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:30pF @ 25V, 23pF @ 25V
  • Power - Max:250mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SC-89 (SOT-563F)
  • Grade:-
  • Qualification:-

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SI1029X-T1-GE3

Overview

The Vishay Siliconix SI1029X-T1-GE3 is a complementary N- and P-channel MOSFET pair in an SC-89 package. The N-Channel features a 60 V drain-source voltage (VDS), 500 mA continuous drain current (ID), and 1.40 Ω on-resistance at VGS = 10 V. The P-Channel offers -60 V VDS, -500 mA ID, and 4 Ω RDS(on) at VGS = -10 V. Both channels have a typical gate threshold voltage of ±2 V and switching times around 15 ns. Maximum power dissipation is 280 mW at 25 °C, with an operating junction temperature range of -55 to +150 °C.

Feature Summary

  • Complementary N- and P-Channel configuration for high-side switching
  • Very small footprint in SC-89 package
  • Low on-resistance and low threshold voltage for ease of driving
  • Fast switching speed with typical 15 ns transition time

Applications

  • Replace digital transistors and level-shifters
  • Battery operated systems
  • Power supply converter circuits

Procurement Notes

Verify the component against the official Vishay datasheet document number 71435. Confirm the marking code 'H' and SC-89 package dimensions match your design requirements. Ensure the supplier provides traceability to the lead-free and halogen-free manufacturing process specified in the product summary.

Selection Notes

Select this component when a compact complementary switch pair is required for low-voltage applications. The N-Channel is suitable for loads up to 500 mA at 10 V drive, while the P-Channel handles similar currents. Verify that the PCB layout accommodates the SC-89 pad recommendations to ensure thermal performance meets the 280 mW dissipation rating.

Part Context

This part belongs to the Si1029X series of TrenchFET power MOSFETs from Vishay Siliconix. It is designed as a drop-in replacement for discrete digital transistors in space-constrained designs. The complementary nature allows for simplified circuit topologies in logic-level translation and power management tasks.

Replacement Considerations

Check pinout compatibility with existing SC-89 footprints. Verify that the replacement device supports the same voltage and current ratings. Ensure the new component is also halogen-free if environmental compliance is required.

SI1029X-T1-GE3SI1029X-T1-GE3
$0.65
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