SI1035X-T1-GE3

Overview

The Vishay Siliconix SI1035X-T1-GE3 is a complementary N- and P-channel MOSFET in an SC-89 package. The N-channel device offers a drain-source voltage of 20 V, with on-resistance values of 5 Ω at 4.5 V gate drive (200 mA current) and 10 Ω at 1.5 V (50 mA). The P-channel counterpart provides 20 V breakdown, featuring 8 Ω resistance at -4.5 V (150 mA) and 20 Ω at -1.5 V (-30 mA). Both channels operate with low threshold voltages around ±0.9 V typical, enabling efficient switching at supply levels as low as 1.5 V.

Feature Summary

• TrenchFET power technology designed for very small footprint applications
• Capable of high-side switching with low offset error voltage
• Features fast switching speeds suitable for high-speed circuits
• Gate-source ESD protection rated at 2000 V

Applications

• Replacing digital transistors and level-shifters
• Battery operated systems requiring low battery voltage operation
• Power supply converter circuits
• Load and power switching in cell phones and pagers

Procurement Notes

Verify the component against the official Vishay datasheet document number 71426 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free status. Cross-reference the marking code 'M' on the top view to validate authenticity. Confirm that the SC-89 package dimensions align with the recommended minimum pad layout provided in application note 826.

Selection Notes

Select this component when designing circuits that require complementary switching pairs within a minimal surface area constraint. The specific on-resistance ratings vary significantly based on gate-source voltage; ensure the driving logic provides sufficient voltage to meet the required current handling capabilities. Verify thermal dissipation requirements against the maximum power dissipation limits at the expected ambient temperature.

Part Context

This part belongs to the Si1035X series of complementary MOSFETs manufactured by Vishay Siliconix. It utilizes TrenchFET technology to achieve low on-resistance in a compact SC-89 (SOT-563F) package. The product is compliant with RoHS Directive 2002/95/EC and is defined as halogen-free according to IEC 61249-2-21 standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the typical gate threshold voltage for the SI1035X?

The typical gate threshold voltage is ±0.9 V for both the N-channel and P-channel devices.

How does the on-resistance change with gate voltage?

On-resistance decreases as gate voltage increases; for example, the N-channel drops from 10 Ω at 1.5 V to 5 Ω at 4.5 V.

Is the device protected against electrostatic discharge?

Yes, the gate-source ESD rating is 2000 V using the Human Body Model (Method 3015).