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SI1071X-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 0.96A SC89-6. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI1071X-T1-GE3
- Description：MOSFET P-CH 30V 0.96A SC89-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：960mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：167mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id：1.45V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：13.3 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：315 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：236mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-89 (SOT-563F)
- Package / Case：SOT-563, SOT-666
Single FETs, MOSFETs datasheet and documents for SI1071X-T1-GE3
Single FETs, MOSFETs Overview
The Vishay Siliconix SI1071X-T1-GE3 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a drain-source voltage of -30 V and a continuous drain current of -0.96 A at 25 °C. The device offers a maximum on-state resistance of 0.167 Ω at VGS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C, with a maximum power dissipation of 0.236 W at 25 °C.
Single FETs, MOSFETs Feature Summary
- TrenchFET Power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 definition
- 100% gate resistance tested for reliability
Single FETs, MOSFETs Applications
- Load switching for portable devices
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '-T1-GE3' matches the required reel packaging and halogen-free compliance status. Confirm that the SC-89 package dimensions align with the target PCB footprint. Ensure the component meets RoHS Directive 2002/95/EC requirements for the intended market.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage applications requiring efficient load switching in compact designs. The SC-89 package provides a small form factor suitable for space-constrained portable electronics. Evaluate thermal management needs based on the specified junction-to-ambient thermal resistance ratings under steady-state conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Si1071X series of P-channel MOSFETs manufactured by Vishay Siliconix. The series utilizes advanced TrenchFET technology to achieve low on-resistance within a compact surface-mount package. The product line is designed for general-purpose switching applications where size and efficiency are critical factors.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay documentation for verified substitute part numbers. Cross-reference pinouts, voltage ratings, and package dimensions before implementation.
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