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SI1406DH-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 3.1A SC70-6. Review the specifications below when checking this part for your BOM.
The Vishay Siliconix SI1406DH-T1-E3 is a lead-free N-channel 20 V (D-S) MOSFET utilizing TrenchFET technology. It operates within a junction and storage temperature range of -55 to 150 °C. The device provides a continuous drain current of 3.9 A at 25 °C, with maximum on-state resistance values of 0.065 Ω at VGS = 4.5 V, 0.075 Ω at VGS = 2.5 V, and 0.096 Ω at VGS = 1.8 V. It features a thermally enhanced SC-70 package.
Verify the specific ordering suffix when sourcing components. The datasheet lists Si1406DH-T1-E3 as lead-free and Si1406DH-T1-GE3 as both lead-free and halogen-free. Confirm that the received part matches the required environmental compliance specifications for your assembly process before integration.
Select this component for applications requiring low gate drive voltages, including 1.8 V rated operation. Ensure the thermal management strategy accounts for the maximum junction-to-ambient thermal resistance of 125 °C in steady state. Validate that the 20 V drain-source voltage rating accommodates peak circuit transients.
This component belongs to the Vishay Siliconix TrenchFET family, designed for surface-mount applications. It utilizes the SOT-363 / SC-70 (6-leads) package configuration. The marking code typically consists of two characters representing the lot traceability and date code.
Si1406DH-T1-GE3
The absolute maximum ratings specify a pulsed drain current (IDM) of 10 A.
RDS(on) decreases as gate voltage increases, measuring 0.096 Ω max at 1.8 V, 0.075 Ω max at 2.5 V, and 0.065 Ω max at 4.5 V.
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