Single FETs, MOSFETs SI1406DH-T1-E3 product image

SI1406DH-T1-E3

  • Description:MOSFET N-CH 20V 3.1A SC70-6
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)

SKU:34a84890cdfb Category: Brand:

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SI1406DH-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 3.1A SC70-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI1406DH-T1-E3

  • Description:MOSFET N-CH 20V 3.1A SC70-6
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 3.9A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):1W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-70-6
  • Package / Case:6-TSSOP, SC-88, SOT-363

Single FETs, MOSFETs datasheet and documents for SI1406DH-T1-E3

SI1406DH-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI1406DH-T1-E3 is a lead-free N-channel 20 V (D-S) MOSFET utilizing TrenchFET technology. It operates within a junction and storage temperature range of -55 to 150 °C. The device provides a continuous drain current of 3.9 A at 25 °C, with maximum on-state resistance values of 0.065 Ω at VGS = 4.5 V, 0.075 Ω at VGS = 2.5 V, and 0.096 Ω at VGS = 1.8 V. It features a thermally enhanced SC-70 package.

Single FETs, MOSFETs Feature Summary

  • TrenchFET Power MOSFET technology enabling low on-resistance performance
  • Thermally enhanced SC-70 package design for efficient heat dissipation
  • Halogen-free construction compliant with IEC 61249-2-21 definition

Single FETs, MOSFETs Applications

  • Load Switching
  • PA Switch
  • Level Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix when sourcing components. The datasheet lists Si1406DH-T1-E3 as lead-free and Si1406DH-T1-GE3 as both lead-free and halogen-free. Confirm that the received part matches the required environmental compliance specifications for your assembly process before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate drive voltages, including 1.8 V rated operation. Ensure the thermal management strategy accounts for the maximum junction-to-ambient thermal resistance of 125 °C in steady state. Validate that the 20 V drain-source voltage rating accommodates peak circuit transients.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix TrenchFET family, designed for surface-mount applications. It utilizes the SOT-363 / SC-70 (6-leads) package configuration. The marking code typically consists of two characters representing the lot traceability and date code.

Single FETs, MOSFETs Replacement Considerations

Si1406DH-T1-GE3

Single FETs, MOSFETs FAQ

What is the maximum pulsed drain current?

The absolute maximum ratings specify a pulsed drain current (IDM) of 10 A.

How does the on-state resistance vary with gate voltage?

RDS(on) decreases as gate voltage increases, measuring 0.096 Ω max at 1.8 V, 0.075 Ω max at 2.5 V, and 0.065 Ω max at 4.5 V.

SI1406DH-T1-E3SI1406DH-T1-E3

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