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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 0.7A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：700mA, 500mA
- Rds On (Max) @ Id, Vgs：388mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：28pF @ 15V
- Power - Max：340mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si1539CDL-T1-GE3 is a dual N- and P-channel MOSFET in a SOT-363 (SC-70) package. It utilizes TrenchFET technology with a 30 V drain-source voltage rating. The N-channel offers an on-resistance of 0.388 Ω at ±10 V gate drive, while the P-channel provides 0.890 Ω under identical conditions. Continuous drain currents are rated at 0.7 A for the N-channel and -0.5 A for the P-channel at a case temperature of 25 °C. The device operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET architecture
- Dual configuration integrating N- and P-channel devices
- Lead-free and halogen-free compliant construction
Applications
- DC/DC converter circuits
- Load switch implementations
Procurement Notes
Verify component authenticity by checking the marking code RG against official datasheet specifications. Confirm that the ordering suffix -T1-GE3 corresponds to the required tape-and-reel packaging format. Ensure compliance with RoHS directives and material categorization requirements before finalizing procurement orders.
Selection Notes
Select this component for applications requiring compact dual-channel switching solutions. Evaluate thermal resistance ratings based on specific PCB copper area and ambient operating temperatures. Verify that the required gate drive voltage aligns with the specified on-resistance thresholds for optimal performance.
Part Context
This part belongs to the Vishay Siliconix LITTLE FOOT series, designed for miniaturized surface-mount applications. It integrates two independent transistors into a single six-lead SC-70 package to save board space.
Replacement Considerations
Consult official cross-reference documentation for verified substitutes. Ensure replacement parts match the SOT-363 footprint and maintain equivalent electrical characteristics.
FAQ
What is the maximum continuous drain current for the N-channel?
The maximum continuous drain current is 0.7 A when the case temperature is maintained at 25 °C.
How does the on-resistance vary with gate voltage?
At a gate-source voltage of ±4.5 V, the N-channel on-resistance increases to 0.525 Ω and the P-channel to 1.700 Ω.
