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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.29A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：290mA, 410mA
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 290mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1551DL-T1-GE3 is a dual N-channel enhancement mode MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOT-363 (SC-70-6) surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current of 2.8 A. Key electrical parameters include a maximum on-resistance of 90 mΩ at a gate-source voltage of 4.5 V, with a gate charge of 3.5 nC. The component supports a junction temperature range from -55 °C to +150 °C and offers a power dissipation rating of 500 mW.
Feature Summary
- Dual configuration integrating two independent N-channel transistors within a compact six-terminal footprint.
Applications
- DC-to-DC converter circuits requiring dual switching elements.
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical ratings required for the target application design. Cross-reference datasheet revisions to confirm compliance with current environmental standards.
Selection Notes
Select this component when a dual N-channel topology is required in a minimal surface-mount form factor. Evaluate the 90 mΩ on-resistance against thermal constraints to ensure adequate heat dissipation within the 500 mW power limit. Confirm that the 30 V voltage rating provides sufficient margin for the intended circuit operation.
Part Context
This component belongs to the SI1 series of small-signal MOSFETs from Vishay Siliconix. The series is characterized by low input charge and fast switching speeds, optimized for portable electronics and battery-powered applications where space efficiency and power management are critical design factors.
Replacement Considerations
Consult official Vishay cross-reference tools for verified alternative part numbers. Do not substitute based solely on pin compatibility; verify matching electrical characteristics and package dimensions.
