SI1553DL-T1-E3

Overview

The Vishay Siliconix Si1553DL-T1-E3 is a complementary MOSFET pair in a SOT-363 (SC-70) surface-mount package. It integrates an N-channel and a P-channel device within a single six-lead footprint. The N-channel unit supports a drain-source voltage of 20 V with an on-resistance of 0.385 Ω at VGS = 4.5 V. The P-channel counterpart also features a 20 V rating, exhibiting an on-resistance of 0.995 Ω at VGS = -4.5 V. Continuous drain currents are rated at ±0.70 A for the N-channel and ±0.66 A for the P-channel at 25 °C ambient temperature. The component operates across a junction temperature range of -55 °C to +150 °C.

Feature Summary

• Complementary N-channel and P-channel configuration integrated into a single compact SOT-363 package
• Utilizes TrenchFET power MOSFET technology for optimized performance
• Designed for low-voltage applications with operation down to 2.5 V gate drive levels

Applications

• Battery-powered portable electronics requiring space-efficient switching solutions
• Low-voltage DC-DC converter circuits utilizing complementary topologies
• Load switch implementations in mobile communication devices

Procurement Notes

Verify the specific ordering suffix when sourcing components. The Si1553DL-T1-E3 designation indicates lead-free construction. Confirm compliance with RoHS Directive 2002/95/EC requirements during procurement. Ensure that the selected variant matches the halogen-free definition per IEC 61249-2-21 if environmental specifications are mandatory for the assembly process.

Selection Notes

Select this component for designs constrained by board space due to its SC-70 six-lead form factor. Evaluate thermal management requirements carefully, as the maximum power dissipation is limited to 0.30 W at 25 °C. Verify that the application's gate drive voltage aligns with the specified thresholds for optimal on-state resistance. Consider the complementary nature of the pair for push-pull or half-bridge configurations where matched switching characteristics are beneficial.

Part Context

This part belongs to the Si1553 series of complementary MOSFETs manufactured by Vishay Siliconix. It is designed to replace discrete N-channel and P-channel pairs, reducing component count and assembly complexity. The product utilizes standard TrenchFET technology, ensuring compatibility with existing design methodologies for low-voltage power management applications.

Replacement Considerations

Direct replacements must match the SOT-363 package and complementary channel configuration. Verify that substitute parts maintain equivalent 20 V ratings and comparable on-resistance values at the target gate drive voltages. Thermal resistance characteristics should be reviewed to ensure adequate heat dissipation in the intended layout.