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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V/8V 0.66A SC70
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V, 8V
- Current - Continuous Drain (Id) @ 25°C：660mA, 570mA
- Rds On (Max) @ Id, Vgs：385mOhm @ 660mA, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The SI1555DL-T1-E3 is a complementary low-threshold MOSFET pair manufactured by Vishay Siliconix. It integrates an N-channel and a P-channel device within a single SOT-363 (SC-70-6) surface-mount package. The component supports a supply voltage range of 1.65 V to 5.5 V, making it suitable for portable applications. Key electrical characteristics include a maximum on-resistance of 0.28 ohms for the N-channel and 0.45 ohms for the P-channel at VGS = 2.5 V. The device features a switching speed with typical turn-on/turn-off times of 1 ns and operates reliably across a temperature range of -55 °C to +150 °C.
Feature Summary
- Complementary N/P-channel configuration in a compact SC-70-6 package
- Low threshold voltage design optimized for 1.65 V to 5.5 V operation
- High current capability with low on-resistance for efficient power management
Applications
- Battery-powered portable electronics
- Smartphones and mobile devices
- Personal digital assistants (PDAs)
- MP3 players and audio equipment
Procurement Notes
Verify the specific suffix 'T1' confirms the reel packaging format and 'E3' indicates lead-free compliance as per Vishay standards. Confirm RoHS status directly from the manufacturer datasheet. Ensure the SC-70-6 footprint matches your PCB layout requirements. Check for any recent discontinuance notices or recommended alternative part numbers provided by Vishay.
Selection Notes
Select this component when space-constrained designs require integrated high-side and low-side switching capabilities. The low threshold voltage makes it ideal for systems operating below standard logic levels. Consider the thermal dissipation limits of the small package if continuous high-current loads are expected. Verify that the required switching speed meets the application's timing constraints.
Part Context
This part belongs to the SI15xx series of complementary MOSFET pairs designed specifically for low-voltage, high-speed switching applications. It is commonly used in battery protection circuits and load switches where minimal board area is critical. The integration of both channel types simplifies bill-of-materials and assembly processes compared to discrete solutions.
Replacement Considerations
Public confirmed substitute part numbers: DG3157DL-T1-E3, SI5515DC-T1-E3, DG2711DL-T1-E3, DG2536DQ-T1-E3, DG201BDY-T1-E3, SIHA15N50E-E3, SI1539DL-T1-E3.
