SI1900DL-T1-GE3

Overview

The Vishay Siliconix SI1900DL-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum continuous drain current of 0.63 A at 25 °C, with an on-state resistance of 0.480 Ω at VGS = 10 V and 0.700 Ω at VGS = 4.5 V. Packaged in a surface-mount SOT-363 (SC-70) housing, it offers a total gate charge of 1.4 nC and a maximum power dissipation of 0.30 W.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
• TrenchFET technology delivers low on-state resistance to minimize conduction losses and improve switching efficiency.
• Halogen-free construction ensures compliance with IEC 61249-2-21 standards for environmentally friendly manufacturing.

Applications

• Battery protection circuits requiring dual-channel control
• Power management systems for portable electronic devices
• Load switching applications in mobile communication equipment

Procurement Notes

Verify the complete part number including the suffix to confirm halogen-free status and lead-free composition. Confirm that the SOT-363 footprint matches the recommended pad dimensions specified in Application Note 826. Ensure procurement channels provide original manufacturer documentation to validate RoHS compliance and traceability requirements.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Evaluate thermal constraints carefully as the maximum power dissipation is limited to 0.30 W. Verify that the 30 V breakdown voltage aligns with the system's supply rails and ensure the gate drive voltage supports the specified RDS(on) thresholds.

Part Context

This component belongs to the Si1900 series of dual MOSFETs from Vishay Siliconix. It shares the SC-70 form factor with other small-signal variants but is distinguished by its specific 30 V rating and dual-channel architecture. The product line emphasizes low profile packaging suitable for high-density PCB layouts.

Replacement Considerations

Direct replacements must match the SOT-363 pinout and electrical ratings. Verify that alternative dual N-channel MOSFETs maintain compatible VGS(th) levels and offer equivalent or lower RDS(on) values to ensure circuit performance parity without redesigning the thermal solution.

FAQ

What is the maximum continuous drain current for the SI1900DL?

The maximum continuous drain current is 0.63 A at an ambient temperature of 25 °C, decreasing to 0.45 A at 85 °C.

Does the SI1900DL-T1-GE3 meet environmental standards?

Yes, it is compliant with the RoHS Directive 2002/95/EC and is defined as halogen-free according to IEC 61249-2-21.

How does the on-resistance vary with gate voltage?

The typical RDS(on) is 0.480 Ω at VGS = 10 V and increases to 0.700 Ω at VGS = 4.5 V under specified test conditions.