SI1902CDL-T1-GE3

Overview

The Si1902CDL is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a continuous drain current of 1.1 A at a case temperature of 25 °C. On-state resistance is specified as 0.235 Ω maximum at VGS = 4.5 V and 0.306 Ω maximum at VGS = 2.5 V. Total gate charge is typically 0.9 nC at VGS = 4.5 V. It is housed in an SC-70 (SOT-363) package with six leads.

Feature Summary

• Dual N-channel configuration integrated into a compact surface-mount package
• TrenchFET power MOSFET architecture for optimized on-resistance
• Gate resistance verified through 100% testing procedures

Applications

• Load switch applications in portable devices
• DC/DC converter circuits for portable electronics
• High speed switching implementations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Ensure the component matches the required SC-70 footprint dimensions and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to validate that all electrical parameters align with your design specifications before finalizing procurement.

Selection Notes

Select this component when a low-voltage dual N-channel solution is required for space-constrained designs. Evaluate the thermal resistance characteristics against your expected ambient temperatures and duty cycles. Confirm that the gate drive voltage levels are compatible with the specified threshold and on-resistance curves for optimal performance.

Part Context

This part belongs to the Si19xx series of dual MOSFETs designed for portable applications. It shares the SC-70 form factor with similar Vishay components but offers distinct electrical ratings tailored for low-voltage switching tasks. The dual configuration allows for independent control of two channels within a single package.

Replacement Considerations

Consult official substitution guides or contact technical support for confirmed equivalent parts. Verify that any alternative component matches the exact pinout, voltage ratings, and thermal characteristics to ensure compatibility without redesigning the circuit board.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage rating is ±12 V.

How does the on-resistance vary with gate voltage?

The maximum on-resistance is 0.235 Ω at VGS = 4.5 V and increases to 0.306 Ω maximum at VGS = 2.5 V.

Is the device suitable for high-temperature environments?

Yes, the operating junction and storage temperature range extends up to +150 °C.