SI1905BDH-T1-E3

Overview

The SI1905BDH-T1-E3 is a dual P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOT-363-6 surface-mount package and operates within a temperature range of -55°C to +150°C. This component features two independent channels designed for enhancement mode operation. The device supports a maximum drain-source voltage of 12V and a continuous drain current of 1.3A. Its on-resistance is specified at 390 mOhms, with a gate threshold voltage of 400 mV. The unit handles up to 1.25W of power dissipation and includes a gate charge of 4.2 nC.

Feature Summary

• Dual channel configuration providing two independent P-channel switches in a single compact package.

Applications

• Battery protection circuits requiring dual switch functionality.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure compliance with RoHS directives and lead-free manufacturing standards. Confirm that the SOT-363-6 package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. Ensure the application voltage does not exceed the 12V rating and that the thermal management strategy accommodates the 1.25W power dissipation limit in the SOT-363-6 package.

Part Context

This part belongs to the SI1 series from Vishay Siliconix, which focuses on low-voltage, high-speed switching applications. The TrenchFET technology is utilized to achieve improved on-resistance characteristics compared to standard planar technologies.

Replacement Considerations

Officially documented alternative part numbers include SI1905BDH-E3.