ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.88A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：880mA
- Rds On (Max) @ Id, Vgs：490mOhm @ 880mA, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：1.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI1913EDH-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a thermally enhanced SC-70 (SOT-363) package. It features a -20 V drain-source voltage rating and supports a continuous drain current of -1.0 A at 25 °C. The device offers low on-state resistance, specified as 0.490 Ω at VGS = -4.5 V and 0.750 Ω at VGS = -2.5 V. Key electrical parameters include a gate threshold voltage ranging from -0.45 V to -1.5 V, a total gate charge of 1.8 nC, and a maximum power dissipation of 0.74 W at 25 °C. The component operates within a junction temperature range of -55 °C to 150 °C.
Feature Summary
- Dual P-channel configuration with independent channel control
- TrenchFET power MOSFET architecture for optimized performance
- ESD protection rated at 3000 V
- Thermally enhanced SC-70 surface-mount package
Applications
- Load switching
- Power amplifier (PA) switching
- Level shifting circuits
Procurement Notes
Verify the specific ordering suffix when sourcing components. The '-E3' suffix indicates lead-free construction compliant with RoHS directives. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change. Ensure that the required packaging format matches the intended automated assembly process.
Selection Notes
Select this component for applications requiring compact dual P-channel switching solutions. Evaluate thermal management requirements against the steady-state junction-to-ambient thermal resistance of 170 °C/W. Verify that the gate drive voltage levels align with the specified RDS(on) thresholds to ensure optimal conduction characteristics during operation.
Part Context
This part belongs to the Vishay Siliconix Si1913EDH series of dual P-channel MOSFETs. It shares the same die and package specifications as the Si1913DH variant, differing primarily in the manufacturing lot traceability and date code marking codes printed on the component body.
Replacement Considerations
The Si1913DH-T1-E3 serves as a direct functional equivalent with identical electrical characteristics. Verify pinout compatibility and physical dimensions before substitution to ensure seamless integration into existing PCB layouts.
FAQ
What is the maximum pulsed drain current for the SI1913EDH?
The absolute maximum pulsed drain current (IDM) is specified as -3 A.
Does the device support single-supply operation?
Yes, the P-channel configuration allows for high-side switching applications typically driven by standard logic levels.
What is the typical turn-on delay time?
The typical turn-on delay time (td(on)) is 0.23 µs under standard test conditions.
