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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 1A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：1A
- Rds On (Max) @ Id, Vgs：370mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 100µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：570mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1917EDH-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a -12 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device offers an on-state resistance of 0.370 Ω at VGS = -4.5 V, with a continuous drain current of -1.15 A at TA = 25 °C. Packaged in a thermally enhanced SC-70 (SOT-363) housing, it provides ESD protection rated at 3000 V and complies with RoHS directives.
Feature Summary
- Dual P-channel configuration using TrenchFET power MOSFET technology
- Thermally enhanced SC-70 package for efficient heat dissipation
- ESD protected up to 3000 V
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- Load switching
- PA switching
- Level switching
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -T1-E3 designation indicates lead-free manufacturing. Confirm that the required quantity matches standard factory packaging limits. Ensure compliance with environmental standards such as RoHS and halogen-free requirements during procurement planning.
Selection Notes
Select this component for low-voltage applications requiring dual independent channels in a compact footprint. Evaluate thermal performance against the maximum junction-to-ambient resistance ratings. Verify gate drive voltages align with the specified thresholds for optimal on-state resistance characteristics.
Part Context
This part belongs to the Vishay Siliconix Si19 series of dual MOSFETs. It shares the SOT-363 package form factor with other devices in the family but differs in electrical specifications. The product utilizes standard surface-mount assembly techniques suitable for automated PCB manufacturing processes.
Replacement Considerations
The datasheet lists Si1917EDH-T1-GE3 as an alternative ordering option. Both variants are lead-free; however, the GE3 suffix explicitly denotes halogen-free compliance according to IEC 61249-2-21 definitions.
