SI1926DL-T1-BE3

Overview

The Vishay Siliconix SI1926DL-T1-BE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70 Dual) package. It features a drain-source voltage of 60 V and a maximum continuous drain current of 0.37 A at 25 °C case temperature. The on-state resistance is specified as 1.4 Ω at VGS = 10 V and 3 Ω at VGS = 4.5 V. Total gate charge reaches 0.9 nC at VGS = 10 V. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Dual N-channel configuration with independent gates for space-efficient integration
• TrenchFET power MOSFET architecture providing optimized on-resistance
• ESD protection rated at 1800 V for enhanced circuit robustness

Applications

• Low power load switch applications
• Battery-powered portable devices requiring compact packaging
• DC-DC converter output stages

Procurement Notes

Verify the specific ordering suffix against the official datasheet to ensure compliance with lead-free or halogen-free requirements. Confirm that the component matches the exact marking code PD. Validate RoHS status through the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when a dual N-channel topology is required within a minimal footprint. Evaluate the 1.4 Ω on-resistance limit to ensure it meets the voltage drop requirements for low-current switching applications. Consider the thermal resistance characteristics for heat dissipation in confined spaces.

Part Context

This device belongs to the Vishay Siliconix TrenchFET family, designed for high-efficiency switching. The SOT-363 package provides a dual-transistor solution suitable for applications where board space is limited but independent control of two channels is necessary.

Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives. Verify that any substitute maintains the 60 V rating and similar on-resistance values to ensure circuit performance consistency.