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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.37A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：370mA
- Rds On (Max) @ Id, Vgs：1.4Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：18.5pF @ 30V
- Power - Max：510mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Si1926DL-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum on-state resistance of 1.4 Ω at VGS = 10 V and 3 Ω at VGS = 4.5 V. Continuous drain current reaches 0.37 A at TC = 25 °C. Packaged in an SOT-363 (SC-70 Dual) housing with six leads, it includes ESD protection rated at 1800 V and undergoes 100% Rg testing.
Feature Summary
- Dual N-channel configuration integrating two independent transistors in a compact SC-70 package
- TrenchFET power MOSFET architecture optimized for low on-resistance performance
- Integrated electrostatic discharge protection rated at 1800 V
- Manufactured with lead-free and halogen-free compliant materials
Applications
- Low power load switch circuits
- Battery management systems requiring dual channel control
- Portable electronic devices with space-constrained layouts
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. Confirm that the GE3 designation aligns with required environmental compliance standards. Ensure the component matches the exact pinout and marking code PD specified in the datasheet to prevent integration errors during assembly.
Selection Notes
Evaluate the thermal resistance characteristics when designing for continuous operation. Verify that the gate drive voltage meets the threshold requirements for the desired on-state resistance level. Consider the package size constraints and ensure the recommended pad layout supports reliable surface mounting.
Part Context
This component belongs to the Si19xxDL series of dual MOSFETs manufactured by Vishay Siliconix. It shares the SOT-363 packaging format common across the family but differs in voltage ratings and current capabilities compared to other variants in the lineup.
Replacement Considerations
Consult the official datasheet for recommended alternative part numbers. Verify electrical compatibility and pin configuration before substituting any components.
