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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.3A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：490mOhm @ 910mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：110pF @ 10V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1967DH-T1-E3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an SOT-363 (SC-70) package. It features a -20 V drain-source voltage rating and a continuous drain current of -1.3 A at TC = 25 °C. The on-state resistance is specified as 0.490 Ω at VGS = -4.5 V and -0.91 A, increasing to 0.640 Ω at VGS = -2.5 V. Total gate charge reaches 4.0 nC at VGS = -8 V. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 1.25 W.
Feature Summary
- TrenchFET Power MOSFET structure optimized for low on-resistance
- Halogen-free construction compliant with IEC 61249-2-21 standards
- PWM optimized switching characteristics
Applications
- Load switch applications for portable devices
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free manufacturing, while the -GE3 variant denotes both lead-free and halogen-free compliance. Confirm that the required RoHS directive adherence matches the intended application environment before finalizing procurement orders.
Selection Notes
Select this component for circuits requiring dual independent P-Channel control within a compact surface-mount footprint. Evaluate thermal management requirements against the 170 °C/W junction-to-ambient resistance limit. Ensure gate drive voltages remain within the ±8 V absolute maximum rating to prevent dielectric breakdown during operation.
Part Context
This part belongs to the Vishay Siliconix Si1967DH series of dual P-Channel MOSFETs. It shares the same physical package and core semiconductor architecture as variants such as the Si1967DH-T1-BE3 and Si1967DH-T1-GE3. The primary distinction lies in environmental compliance certifications rather than electrical performance differences.
Replacement Considerations
Direct substitutes include Si1967DH-T1-BE3 and Si1967DH-T1-GE3. These parts share identical electrical specifications and pinout configurations. Verify environmental compliance requirements to ensure the replacement meets specific halogen or lead-free constraints.
