SI1972DH-T1-GE3

Overview

The SI1972DH-T1-GE3 is a dual N-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 1.3 A. The device utilizes the TrenchFET technology for enhanced performance. It is housed in an SC-70-6 surface mount package, suitable for space-constrained applications. The component operates within a temperature range extending down to -55°C and up to +150°C junction temperature. It includes two independent channels configured as a single dual unit.

Feature Summary

• Dual N-channel configuration providing two independent switching paths within a compact footprint.
• Utilizes TrenchFET technology to achieve low on-resistance and efficient power handling.
• Designed for surface-mount assembly with a small SC-70-6 package profile.

Applications

• Battery protection circuits
• Power management modules
• Consumer electronics load switching

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure compliance with RoHS and REACH standards. Confirm that the requested part number matches the exact electrical specifications required for the design. Cross-reference the datasheet revision date to ensure all parameter limits are current. Ensure storage and handling procedures adhere to moisture sensitivity levels defined in the package data sheet.

Selection Notes

Select this component when a dual-switching solution is required in a minimal board area. The 30 V rating suits low-voltage systems such as portable devices. Consider the 1.3 A current limit for moderate load applications. The SC-70-6 package offers thermal and mechanical advantages over larger packages. Evaluate the total power dissipation capabilities relative to the PCB copper area available for heat spreading.

Part Context

This part belongs to the Vishay Siliconix discrete semiconductor product line. It is categorized under MOSFET arrays and dual transistors. The series designation indicates a dual-channel enhancement mode device. It complements single-channel variants by offering integrated switching functionality. The product supports automated surface-mount manufacturing processes.

Replacement Considerations

Publicly confirmed substitute part numbers are not identified in the provided source material. Verify compatibility with alternative dual N-channel MOSFETs by comparing pinout configurations, voltage ratings, and package dimensions. Ensure that any replacement maintains the same thermal resistance characteristics and switching speeds.