SI1988DH-T1-E3

Overview

The SI1988DH-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a 20V drain-source voltage rating and supports a continuous drain current of 1.3A. The device offers a maximum on-resistance of 168 milliohms at a gate-source voltage of 4.5V, with a threshold voltage ranging from 0.7 to 1.5 volts. Packaged in an SC-70 (SOT-363) surface-mount housing, it operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• TrenchFET technology ensures low on-resistance and fast switching performance
• SC-70 package provides compact footprint for portable applications

Applications

• Battery protection circuits
• Power management modules
• Portable electronic devices

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm that the part number suffix matches the exact electrical characteristics required for your design. Ensure compliance with RoHS directives if applicable to your region. Cross-reference the ordering information with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The 20V rating suits low-voltage battery systems. Evaluate the 168 milliohm on-resistance against thermal constraints. Consider the SC-70 package dimensions for PCB layout compatibility. Verify gate charge requirements for driving efficiency in high-speed switching applications.

Part Context

This part belongs to the SI19xx series of dual MOSFETs designed for low-voltage applications. It shares the SC-70 package form factor with other Vishay Siliconix dual transistors. The TrenchFET process differentiates it from standard planar devices by offering improved conduction characteristics.

Replacement Considerations

SI1988DH-T1-GE3 is a verified equivalent variant within the same product family.