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SI2333CDS-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 12V 7.1A SOT23-3. Review the specifications below when checking this part for your BOM.
The SI2333CDS-T1-GE3 is a Vishay Siliconix P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a -12 V drain-source voltage and a maximum continuous drain current of -7.1 A at TC = 25 °C. The device offers a typical gate charge of 9 nC and operates within a junction temperature range of -55 °C to +150 °C. Packaged in an SOT-23 (TO-236) surface-mount housing, it provides low on-state resistance for efficient power switching.
Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free status. Ensure the component matches the SOT-23 package dimensions and pinout configuration required by the target circuit design. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before finalizing procurement.
Select this component for applications requiring a single P-channel switch with a -12 V rating. Evaluate thermal management requirements based on the specified power dissipation limits at various case temperatures. Confirm that the gate drive voltage aligns with the specified RDS(on) thresholds for optimal conduction performance.
This component belongs to the Si2333CDS series from Vishay Siliconix. It is designed as a general-purpose power switching device suitable for compact electronics. The marking code O3 identifies the device on the package surface.
Consult official Vishay documentation for verified substitute part numbers.
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