SI2333CDS

$0.31

Description：MOSFET P-CH 12V 7.1A SOT23
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:55c09d4f63bf Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

SI2333CDS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET P-CH 12V 7.1A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI2333CDS

Description：MOSFET P-CH 12V 7.1A SOT23
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：35mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：1.25W (Ta), 2.5W (Tc)
Operating Temperature：-55°C ~ 155°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SI2333CDS

SI2333CDS

Single FETs, MOSFETs Overview

The UMW SI2333CDS is a P-Channel MOSFET housed in an SOT-23 package. It features a Drain-Source Voltage (VDS) of -12 V and a continuous drain current (ID) of -5.1 A at TA = 25 °C. The on-state resistance (RDS(on)) is specified as 35 mΩ max at VGS = -4.5 V, 45 mΩ max at VGS = -2.5 V, and 59 mΩ max at VGS = -1.8 V. Total gate charge (Qg) is typically 9 nC at VGS = -4.5 V. The device supports an operating junction temperature range from -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET technology for enhanced switching performance and low on-resistance.
Designed specifically for load switch applications requiring efficient power management.
Suitable for PA switch configurations in portable electronic devices.

Single FETs, MOSFETs Applications

Load Switch
PA Switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct packaging and delivery mode. Confirm that the component meets all required electrical specifications for the intended circuit design before procurement. Cross-reference the datasheet parameters with system requirements to guarantee compatibility.

Single FETs, MOSFETs Selection Notes

Select this component based on its -12 V rating and low RDS(on) characteristics suitable for high-efficiency switching. Consider the thermal resistance ratings and maximum power dissipation limits when designing the heat dissipation strategy. Ensure the gate drive voltage aligns with the specified thresholds for optimal conduction.

Single FETs, MOSFETs Part Context

This part belongs to the family of plastic-encapsulated MOSFETs manufactured by UMT Semiconductor. It is designed for surface-mount applications, offering a compact footprint in the SOT-23 package. The device integrates a single P-Channel enhancement mode field-effect transistor optimized for low-voltage power switching tasks.