SI2336DS-T1-BE3

$0.40

Description：MOSFET N-CH 30V 4.3A/5.2A SOT23
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bdf27be8cf96 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI2336DS-T1-BE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 4.3A/5.2A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI2336DS-T1-BE3

Description：MOSFET N-CH 30V 4.3A/5.2A SOT23
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta), 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：42mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：560 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta), 1.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for SI2336DS-T1-BE3

SI2336DS-T1-BE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI2336DS-T1-BE3 is an N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features a maximum continuous drain current of 5.2 A at TC = 25 °C and a typical total gate charge of 5.7 nC at VGS = 4.5 V. The device operates within a junction temperature range of -55 to 150 °C.

Single FETs, MOSFETs Feature Summary

TrenchFET Power MOSFET architecture
100% Rg Tested

Single FETs, MOSFETs Applications

DC/DC Converters
Boost Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates material compliance attributes such as lead-free or halogen-free status. Confirm that the component meets RoHS requirements for your target market before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Evaluate the thermal resistance ratings and power dissipation limits relative to your system's cooling capabilities. Ensure the gate drive voltage aligns with the specified thresholds to achieve the desired on-state resistance and switching performance characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si2336DS series of single N-channel MOSFETs. It is designed for surface-mount applications in compact electronic circuits requiring efficient power switching capabilities within a small footprint.