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SI2343DS-T1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 30V 3.1A SOT23-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI2343DS-T1
- Description：MOSFET P-CH 30V 3.1A SOT23-3
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：53mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：540 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：750mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for SI2343DS-T1
Single FETs, MOSFETs Overview
The Vishay Siliconix SI2343DS-T1 is a P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a maximum drain-source voltage of 30V and a continuous drain current of 3.1A at 25°C. The device operates within a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 750mW. Key electrical parameters include a maximum gate-source voltage of ±20V, a typical gate charge of 21nC at 10V, and an input capacitance of 540pF at 15V.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for enhanced performance in surface-mount applications.
- Designed as a single P-channel enhancement mode transistor for efficient switching.
Single FETs, MOSFETs Applications
- Power management circuits requiring low-side or high-side switching.
- Battery protection systems utilizing P-channel control.
- General-purpose load switching in portable electronic devices.
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix of the ordered part number against official documentation, as variations such as E3 or GE3 indicate compliance standards that may differ from the base model. Confirm component availability status, as certain variants are marked obsolete by the manufacturer. Ensure all technical specifications align with the final datasheet provided by Vishay before implementation.
Single FETs, MOSFETs Selection Notes
Select this component based on its 30V rating and 3.1A current capacity suitable for compact SOT-23 designs. Evaluate thermal constraints carefully due to the 750mW power dissipation limit in standard packages. Compare gate charge requirements against driver capabilities to ensure adequate switching speed without excessive drive current demands.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the TrenchFET family of MOSFETs. These devices are engineered for high-density surface-mount integration, offering reliable operation across wide industrial temperature ranges while maintaining consistent electrical characteristics for precision control applications.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical limits when considering similar P-channel MOSFETs in the SOT-23 package to ensure functional compatibility without circuit modification.
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