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Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
- Rds On (Max) @ Id, Vgs：300mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：28pF @ 16V
- Power - Max：260mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363S
- Grade：-
- Qualification：-
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Overview
The SI3134KDWAS-TPQ2 is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes the SOT-363S surface-mount package and operates on silicon technology. The device features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 750 mA. Its gate-source voltage range spans from -12 V to +12 V, with a threshold voltage of 350 mV. The component exhibits a maximum power dissipation of 150 mW and functions within an operating temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration integrating two independent N-channel enhancement-mode transistors in a single compact package.
Applications
- Low-voltage load switching applications
- Portable battery-powered equipment
- General-purpose signal switching
Procurement Notes
Verify the specific suffix 'Q2' against official MCC documentation to confirm automotive qualification status or variant specifications. Ensure the ordering part number matches the exact datasheet revision. Confirm RoHS compliance details directly from the manufacturer's declaration. Validate that the SOT-363S package dimensions align with target PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component for designs requiring dual N-channel switching in space-constrained environments. The 20 V rating suits low-voltage logic interfaces. Evaluate thermal management needs given the 150 mW power dissipation limit in the small outline package. Ensure gate drive voltages remain within the specified ±12 V range to prevent device damage.
Part Context
This part belongs to the SI3134K series of dual N-channel MOSFETs from Micro Commercial Components. The series is designed for general-purpose switching applications where board space is limited. The DWAS designation indicates the specific SOT-363S package style used for surface mount assembly.
FAQ
What is the package type for the SI3134KDWAS-TPQ2?
The component is housed in an SOT-363S surface-mount package.
Is the SI3134KDWAS-TPQ2 a single or dual channel device?
It is a dual N-channel MOSFET containing two independent channels.
