SI3134KU6-TP

SI3134KU6-TP

$0.31
  • Description:MOSFET 2N-CH 20V 0.75A 6DFN
  • Series:-

SKU:f866ef72428b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 0.75A 6DFN
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:750mA (Ta)
  • Rds On (Max) @ Id, Vgs:250mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:33pF @ 16V
  • Power - Max:420mW (Tj)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1010B-6
  • Grade:-
  • Qualification:-

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SI3134KU6-TP

Overview

The SI3134KU6-TP is a single N-channel enhancement mode MOSFET manufactured by Micro Commercial Components (MCC). It utilizes trench LV technology and is housed in a DFN1010B-6 surface-mount package. The device features a drain-source breakdown voltage of 20 V and a continuous drain current rating of 0.75 A at 25°C, with a pulsed drain current capability of 3 A. Key electrical parameters include a maximum on-resistance of 250 mΩ at VGS=4.5V and ID=0.5A, and a gate threshold voltage ranging from 0.35 V to 1.2 V. The component supports an operating junction temperature range of -55°C to +150°C and offers ESD protection up to 2 kV (HBM).

Feature Summary

  • Trench LV MOSFET technology for optimized performance.
  • ESD protected up to 2KV (HBM) for enhanced reliability.
  • Moisture Sensitivity Level 1 classification.

Applications

  • Low voltage power management circuits.
  • Battery-powered portable devices.
  • General purpose switching applications.

Procurement Notes

Verify the authenticity of the SI3134KU6-TP by purchasing directly from Micro Commercial Components or their authorized distributors. MCC maintains strict anti-counterfeiting measures and does not provide warranty coverage for parts acquired from unauthorized sources. Ensure that the ordering suffix matches the required packaging configuration, such as Tape & Reel quantities, before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel MOSFET with low gate charge and fast switching characteristics is required. The DFN1010B-6 package provides efficient thermal dissipation within a small footprint. Consider the 20 V breakdown voltage and 0.75 A continuous current limits to ensure adequate headroom for the specific application requirements.

Part Context

This part belongs to the SI3134 series of N-channel MOSFETs produced by Micro Commercial Components. The manufacturer specializes in discrete semiconductor products including diodes, transistors, and MOSFETs. The SI3134KU6-TP variant specifically denotes the DFN1010B-6 package configuration with RoHS compliance indicated by the suffix.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FAQ

What is the maximum thermal resistance of the SI3134KU6-TP?

The maximum thermal resistance from junction to ambient is 300°C/W.

Does the SI3134KU6-TP meet environmental standards?

Yes, it is a halogen-free green device with lead-free finish and meets UL 94 V-0 flammability ratings.

What is the internal pin configuration of the DFN1010B-6 package?

Pins 1 and 4 are Source; Pins 2 and 5 are Gate; Pins 3, 6, 7, and 8 are Drain.

SI3134KU6-TPSI3134KU6-TP
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