SI3139KDW-TP

SI3139KDW-TP

  • Description:MOSFET 2P-CH 20V 0.66A SOT363
  • Series:-

SKU:8ee3c4e03e6a Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 0.66A SOT363
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:660mA
  • Rds On (Max) @ Id, Vgs:520mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:175pF @ 16V
  • Power - Max:150mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

Download product information

SI3139KDW-TP

Overview

The SI3139KDW-TP is a silicon N-channel enhancement mode MOSFET manufactured by Micro Commercial Components. It is housed in an SOT-723 surface-mount package and operates with a drain-source voltage of 20 V and a continuous drain current of 750 mA. The device features a low on-resistance of 380 mOhms at a gate drive of 4.5 V, ensuring efficient power handling. It supports a wide operating temperature range from -55°C to +150°C junction temperature and includes protection against electrostatic discharge.

Feature Summary

  • N-channel enhancement mode operation for standard switching applications
  • Low thermal resistance and high reliability under extreme temperatures
  • ESD protection rated at 2 kV Human Body Model and 500 V Machine Model

Applications

  • Battery protection circuits
  • Power management systems
  • Load switches in portable devices

Procurement Notes

Verify the specific suffix KDW against official MCC documentation to confirm the exact tape-and-reel packaging configuration and marking codes. Ensure that the ordering information matches the required quantity increments and lead times provided by authorized distributors. Cross-reference the datasheet revision date to guarantee compliance with current RoHS standards and material declarations before finalizing procurement orders.

Selection Notes

Select this component when a compact N-channel MOSFET with 20 V rating and 750 mA capability is required. The SOT-723 package offers space efficiency for dense PCB layouts. Consider the 380 mOhm on-resistance for low-loss switching applications. Verify that the gate threshold voltage characteristics align with the driving logic levels of the target circuit design.

Part Context

This part belongs to the SI3139KA series of small-signal MOSFETs designed for general-purpose switching. It shares similar electrical characteristics with other variants in the family but differs in packaging and specific manufacturing lot details. The device is intended for use in consumer electronics and industrial control boards requiring reliable performance in limited space constraints.

Replacement Considerations

Consult official substitution lists for compatible parts such as the SI3134K-TP if pinout compatibility is maintained. Verify that alternative components match the 20 V / 750 mA specifications and SOT-723 footprint. Do not assume interchangeability without confirming thermal and electrical parameter alignment.

SI3139KDW-TPSI3139KDW-TP

Click on the inquiry