SI3439KDW-TP

$0.40

Description：MOSFET N/P-CH 20V 0.75A SOT363
Series：-

SKU:8203b9f1e20c Category: FET, MOSFET Arrays Brand: MCC (Micro Commercial Components)

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 0.75A SOT363
Series：-
Mfr：MCC (Micro Commercial Components)
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：750mA, 660mA
Rds On (Max) @ Id, Vgs：380mOhm @ 650mA, 4.5V, 520mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：120pF @ 16V, 113pF @ 16V
Power - Max：150mW
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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SI3439KDW-TP

Overview

The SI3439KDW-TP is a dual N+P-channel MOSFET in a SOT-363 package. It features a Drain-Source Voltage of ±20V, Continuous Drain Current of 0.75A (N) and -0.66A (P), and On-Resistance of 190mΩ (N) and 450mΩ (P). The device operates at low logic levels with a Threshold Voltage of 0.75V (N) and -0.60V (P). Total Power Dissipation is 150mW, and the Junction Temperature Range is -55°C to +150°C.

Feature Summary

Low RDS(on)
Operated at Low Logic Level Gate Drive
Epoxy Meets UL 94 V-0 Flammability Rating
Moisture Sensitivity Level 1

Applications

Battery Protection Circuits
Power Management Systems
Signal Switching Applications

Procurement Notes

Verify authenticity by checking for authorized distributor channels. Confirm RoHS compliance via the 'TP' suffix designation. Ensure packaging matches Tape & Reel specifications. Validate datasheet revision against current manufacturer documentation. Check for Halogen-free certification if required by project standards.

Selection Notes

Select based on required voltage ratings and current handling capabilities. Consider thermal resistance values for heat dissipation requirements. Evaluate gate drive compatibility with control logic levels. Verify package dimensions for PCB layout constraints. Assess switching speed characteristics for high-frequency applications.

Part Context

This component belongs to Micro Commercial Components' dual MOSFET portfolio. It integrates complementary N-channel and P-channel transistors into a single compact surface-mount package. Designed for space-constrained electronic circuits requiring efficient power switching and signal routing functions.