SI3439KDWAS-TP

Overview

The SI3439KDWAS-TP is a dual N+P-channel MOSFET in a SOT-363S package. It utilizes Trench LV technology for low on-resistance. The N-channel offers a drain-source voltage of 20V, continuous current of 0.75A, and Rds(on) of 0.3Ω at Vgs=4.5V. The P-channel provides -20V, -0.6A, and 0.85Ω at Vgs=-4.5V. Operating junction temperature ranges from -55°C to +150°C with thermal resistance of 385°C/W.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs into a single compact surface-mount device.
• Employs trench low-voltage technology to achieve enhanced switching performance and reduced conduction losses.
• Features robust electrostatic discharge protection rated at HBM Class 2.

Applications

• Low-voltage power management circuits
• Battery-powered portable devices
• Signal switching applications

Procurement Notes

Verify the component against the official MCC datasheet specifications before integration. Confirm that the ordering suffix indicates RoHS compliance. Ensure sourcing channels are authorized distributors to guarantee authenticity and traceability. Validate package markings match the internal structure diagram provided in the documentation.

Selection Notes

Select this component for designs requiring complementary switching in minimal space. Compare the specific on-resistance values against load requirements. Consider the thermal resistance limits when determining heat dissipation needs. Verify gate threshold voltages align with the control logic levels used in the system.

Part Context

This part belongs to the Micro Commercial Components dual MOSFET family. It serves as a space-saving alternative to discrete transistor pairs. The SOT-363S package facilitates automated assembly. It is designed for general-purpose switching tasks in consumer electronics.

Replacement Considerations

Consult the manufacturer's database for verified substitute part numbers. Cross-reference pinouts and electrical characteristics carefully. Do not assume functional equivalence based solely on package similarity.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Does the device include body diodes?

Yes, both the N-channel and P-channel transistors feature integrated body diodes with specified forward voltages and reverse recovery times.

How is the thermal resistance defined?

The thermal resistance (RθJA) is 385°C/W, measured with the device mounted on a 1in² FR-4 board with 2oz copper in still air at 25°C.